Interfacial layers and impurity segregation in InP/In0.53Ga0.47As superlattices

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3420

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DC Field	Value	Language
dc.creator	Hanamoto L. K.	-
dc.creator	Henriques A. B.	-
dc.creator	Tribuzy C. V.-B.	-
dc.creator	Souza P. L.	-
dc.creator	Yavich B.	-
dc.creator	Abramof E.	-
dc.date	2002	-
dc.date.accessioned	2013-05-30T01:49:48Z	-
dc.date.available	2013-05-30T01:49:48Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200023	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=334	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/3420	-
dc.description	The interfaces in InP=In0.53 Ga0.47As superlattices modulation doped with Si were investigated using magneto-transport, capacitance-voltage, and high resolution X-ray diffraction measurements. Results indicate that a thick interfacial layer is formed when InP is grown on top of In xGa1-xAs, and that Si atoms that fall in the interfacial layer have a high probability of not forming a shallow donor center. Using a simple theoretical model the width of the interfacial layer which was estimated to be 7±1 monolayers.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Interfacial layers and impurity segregation in InP/In0.53Ga0.47As superlattices	-
Appears in Collections:	Physics and Astronomy

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