Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3426
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dc.creatorSeraide R. M.-
dc.creatorHai G.-Q.-
dc.date2002-
dc.date.accessioned2013-05-30T01:51:19Z-
dc.date.available2013-05-30T01:51:19Z-
dc.date.issued2013-05-30-
dc.identifierhttp://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200026-
dc.identifierhttp://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=344-
dc.identifier.urihttp://koha.mediu.edu.my:8181/jspui/handle/123456789/3426-
dc.descriptionWe present a theoretical study on the electron mobility and scattering mechanism in a remotely doped AlGaAs wide parabolic quantum well. Electron mobilities in different subbands are calculated from the self-consistent results of the subband energy and wavefunction in the system. The scattering due to ionized impurities and alloy disorder is considered. We show theinterplay of the different scattering mechanisms.-
dc.publisherSociedade Brasileira de Física-
dc.sourceBrazilian Journal of Physics-
dc.titleLow-temperature electron mobility in parabolic quantum wells-
Appears in Collections:Physics and Astronomy

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