In-situ determination of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3436

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DC Field	Value	Language
dc.creator	Martini S.	-
dc.creator	Quivy A. A.	-
dc.date	2002	-
dc.date.accessioned	2013-05-30T01:53:52Z	-
dc.date.available	2013-05-30T01:53:52Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200031	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=359	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/3436	-
dc.description	The surface segregation of indium atoms during the growth of InGaAs/GaAs heterostructures has been investigated in situ by reflection high-energy electron diffraction (RHEED). We pointed out that strong damping of the RHEED oscillations during the deposition of InGaAs on GaAs was related to the segregation strength of indium atoms in the InGaAs layer. A simple model shows that the decay constant of the RHEED oscillations may be used to determine accurately the segregation coefficient R, as confirmed by photoluminescence (PL) measurements.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	In-situ determination of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy	-
Appears in Collections:	Physics and Astronomy

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