Local order structure of a-SiOxNy:H grown by PECVD

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3440

Full metadata record

DC Field	Value	Language
dc.creator	Scopel W.L.	-
dc.creator	Fantini M.C.A.	-
dc.creator	Alayo M.I.	-
dc.creator	Pereyra I.	-
dc.date	2002	-
dc.date.accessioned	2013-05-30T01:54:53Z	-
dc.date.available	2013-05-30T01:54:53Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200033	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=366	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/3440	-
dc.description	In this work we study the structural properties of amorphous oxynitride films (a-SiOxNy), grown by plasma enhanced chemical vapour deposition (PECVD)at 320° C. The films were deposited at different ow ratio of N2O and SiH4. The atomic composition of the samples was determined by means of Rutherford backscattering spectrometry (RBS). The local order structure was studied by X-ray absorption spectroscopy (XAS) and the chemical bondings were investigated by Fourier transform infrared (FTIR) spectroscopy. The results evidence a tetrahedric arrangement of the oxynitride network. The tetrahedrons are similiar to SiO3N for x values between 1.43 and 1.64. For x values higher than 1.64 the tetrahedrons are similar to SiO4.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Local order structure of a-SiOxNy:H grown by PECVD	-
Appears in Collections:	Physics and Astronomy

Files in This Item:

There are no files associated with this item.

DSpace JSPUI