Pulsed laser crystallization of SiGe alloys on GaAs

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3446

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DC Field	Value	Language
dc.creator	Dondeo F.	-
dc.creator	Santos P. V.	-
dc.creator	Ramsteiner M.	-
dc.creator	Comedi D.	-
dc.creator	Pudenzi M. A. A.	-
dc.creator	Chambouleyron I.	-
dc.date	2002	-
dc.date.accessioned	2013-05-30T01:56:26Z	-
dc.date.available	2013-05-30T01:56:26Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200036	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=376	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/3446	-
dc.description	We have investigated the crystallization of amorphous SiGe films deposited on crystalline GaAs (001) substrates using ns laser pulses. Analysis of the film structure using Raman spectroscopy indicates the formation of heteroepitaxial Si xGe1/GaAs structures for Si compositions up to x = 25%. Higher compositions lead to polycrystalline films. This is attributed to the increased lattice mismatch between Si xGe1 and GaAs as the Si fraction in the alloy increases	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Pulsed laser crystallization of SiGe alloys on GaAs	-
Appears in Collections:	Physics and Astronomy

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