Please use this identifier to cite or link to this item:
http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3446
Title: | Pulsed laser crystallization of SiGe alloys on GaAs |
Issue Date: | 30-May-2013 |
Publisher: | Sociedade Brasileira de Física |
Description: | We have investigated the crystallization of amorphous SiGe films deposited on crystalline GaAs (001) substrates using ns laser pulses. Analysis of the film structure using Raman spectroscopy indicates the formation of heteroepitaxial Si xGe1/GaAs structures for Si compositions up to x = 25%. Higher compositions lead to polycrystalline films. This is attributed to the increased lattice mismatch between Si xGe1 and GaAs as the Si fraction in the alloy increases |
URI: | http://koha.mediu.edu.my:8181/jspui/handle/123456789/3446 |
Other Identifiers: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200036 http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=376 |
Appears in Collections: | Physics and Astronomy |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.