Please use this identifier to cite or link to this item:
http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3454| Title: | Ionizing radiation and hot carrier effects in SiC MOS devices |
| Issue Date: | 30-May-2013 |
| Publisher: | Sociedade Brasileira de Física |
| Description: | We performed comparative studies of radiation-induced interface trap generation at n-6H-SiC/SiO2 and Si/SiO2 interfaces for high doses of low energy x-rays in the range 0 to 200 Mrad (Si). We found that radiation-induced interface trap generation at the n-6H-SiC/SiO2 interface is much lower than at the Si/SiO2 interface. The experiments provide evidence of interface trap generation near the SiC conduction band associated with oxide traps. |
| URI: | http://koha.mediu.edu.my:8181/jspui/handle/123456789/3454 |
| Other Identifiers: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200040 http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=389 |
| Appears in Collections: | Physics and Astronomy |
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