Ionizing radiation and hot carrier effects in SiC MOS devices

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3454

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DC Field	Value	Language
dc.creator	Vasconcelos E. A. de	-
dc.creator	Silva Jr. E. F. da	-
dc.creator	Katsube T.	-
dc.creator	Yoshida S.	-
dc.date	2002	-
dc.date.accessioned	2013-05-30T01:58:32Z	-
dc.date.available	2013-05-30T01:58:32Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200040	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=389	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/3454	-
dc.description	We performed comparative studies of radiation-induced interface trap generation at n-6H-SiC/SiO2 and Si/SiO2 interfaces for high doses of low energy x-rays in the range 0 to 200 Mrad (Si). We found that radiation-induced interface trap generation at the n-6H-SiC/SiO2 interface is much lower than at the Si/SiO2 interface. The experiments provide evidence of interface trap generation near the SiC conduction band associated with oxide traps.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Ionizing radiation and hot carrier effects in SiC MOS devices	-
Appears in Collections:	Physics and Astronomy

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