Adsorption of Si and C atoms over SiC (111) surfaces

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3458

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DC Field	Value	Language
dc.creator	Vivas P. G.	-
dc.creator	Silva E. E. da	-
dc.creator	Carvalho L. C. de	-
dc.creator	Alves J. L. A.	-
dc.creator	Alves H. W. Leite	-
dc.creator	Scolfaro L. M. R.	-
dc.creator	Leite J. R.	-
dc.date	2002	-
dc.date.accessioned	2013-05-30T01:59:35Z	-
dc.date.available	2013-05-30T01:59:35Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200042	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=396	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/3458	-
dc.description	In this work, using Density Functional, Hartree-Fock and Extended Hückel Theories together with the supercell and cluster model approaches, we present our preliminary results for the simulation of the adsorption of Si and C atoms over the (111) SiC surfaces as well as the torsion of SiC molecules at that surfaces. Our results shown that, before and after the adsorption, the cubic structure are the most stable one, when compared with the hexagonal ones. However, the torsional energy barrier between the cubic and the hexagonal structures is small enough that, at the conditions of SiC growth, it facilitates the SiC polytype formation.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Adsorption of Si and C atoms over SiC (111) surfaces	-
Appears in Collections:	Physics and Astronomy

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