On the morphology of films grown by droplet-assisted molecular beam epitaxy

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3460

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DC Field	Value	Language
dc.creator	Lamas T. E.	-
dc.creator	Quivy A. A.	-
dc.date	2002	-
dc.date.accessioned	2013-05-30T02:00:07Z	-
dc.date.available	2013-05-30T02:00:07Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200043	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=399	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/3460	-
dc.description	Atomic Force microscopy was used to investigate the morphology of GaAs(001) layers deposited by molecular beam epitaxy using a non conventional growth method that involves the supply of a few monolayers of gallium (the arsenic cell is shuttered) followed by the annealing of the surface under an arsenic ux (the gallium cell is shuttered). When the silicon shutter is opened and closed together with the gallium one, this particular growth mode allows the silicon atoms to be incorporated into the arsenic sites and p-type GaAs(001) layers can be obtained. Several sets of samples were grown and analyzed in order to better understand the microscopic growth mechanisms of this kind of layers and minimize the number and size of the structural defects that are characteristic of this peculiar technique.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	On the morphology of films grown by droplet-assisted molecular beam epitaxy	-
Appears in Collections:	Physics and Astronomy

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