Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3462
Title: Hole transport characteristics in pure and doped GaSb
Issue Date: 30-May-2013
Publisher: Sociedade Brasileira de Física
Description: The steady state hole transport properties of GaSb were investigated by the Ensemble Monte Carlo method (EMC). In our model we taken in to account heavy and light hole valence bands, and the following scattering mechanisms: inelastic acoustic phonon; polar optical phonon; nonpolar optical; ionized impurity. The theoretical calculations are compared with available experimental results for the GaSb hole mobility shown good agreement with temperatures from 90K up to 300K.
URI: http://koha.mediu.edu.my:8181/jspui/handle/123456789/3462
Other Identifiers: http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200044
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=402
Appears in Collections:Physics and Astronomy

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