Hole transport characteristics in pure and doped GaSb

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/3462

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DC Field	Value	Language
dc.creator	Messias L.G.O.	-
dc.creator	Marega Jr. E.	-
dc.date	2002	-
dc.date.accessioned	2013-05-30T02:00:39Z	-
dc.date.available	2013-05-30T02:00:39Z	-
dc.date.issued	2013-05-30	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200044	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=402	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/3462	-
dc.description	The steady state hole transport properties of GaSb were investigated by the Ensemble Monte Carlo method (EMC). In our model we taken in to account heavy and light hole valence bands, and the following scattering mechanisms: inelastic acoustic phonon; polar optical phonon; nonpolar optical; ionized impurity. The theoretical calculations are compared with available experimental results for the GaSb hole mobility shown good agreement with temperatures from 90K up to 300K.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Hole transport characteristics in pure and doped GaSb	-
Appears in Collections:	Physics and Astronomy

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