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http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/4113| Title: | Modelagem dos processos químicos em plasmas de misturas gasosas usadas na corrosão de silício. Parte 2: SF6 / O2 |
| Keywords: | plasma etching numerical modeling SF6 decomposition |
| Issue Date: | 30-May-2013 |
| Publisher: | Sociedade Brasileira de Química |
| Description: | In this work, a numerical modeling analysis of the gas-phase decomposition of SF6 / O2 mixtures, in the presence of silicon, was performed. The relative importance of individual processes and the effect of the parameters' uncertainties were determined. The model was compared with experimental data for the plasma etching of silicon and with the calculated results for the CF4 / O2 system. In both systems the main etching agent is the fluorine atom and the concentration of the major species depends on the composition of the mixture. The etching rate is greater for SF6 / O2. |
| URI: | http://koha.mediu.edu.my:8181/jspui/handle/123456789/4113 |
| Other Identifiers: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0100-40421998000100006 http://www.doaj.org/doaj?func=openurl&genre=article&issn=01004042&date=1998&volume=21&issue=1&spage=34 |
| Appears in Collections: | Chemistry |
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