Structure and bonding of iron-acceptor pairs in silicon

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/7722

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DC Field	Value	Language
dc.creator	Zhao S.	-
dc.creator	Justo J. F.	-
dc.creator	Assali L. V. C.	-
dc.creator	Kimerling L. C.	-
dc.date	2002	-
dc.date.accessioned	2013-06-01T09:10:16Z	-
dc.date.available	2013-06-01T09:10:16Z	-
dc.date.issued	2013-06-01	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200049	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=418	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/7722	-
dc.description	Iron-acceptor pairs (Fe-A, A = B, Al, Ga, and In) in silicon were investigated using an ionic-based model, which incorporates the valence electron cloud polarization and the lattice relaxation.Our results are generaly in good agreement with the experimental trends among the Fe-A pairs, describing the increase in the pair donor energy level with increasing A principal quantum number and decreasing pair separation distance, and the pair configurational symmetries.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Structure and bonding of iron-acceptor pairs in silicon	-
Appears in Collections:	Physics and Astronomy

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