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Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/7724
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dc.creatorLaranjeira J. M. G.-
dc.creatorKhoury H. J.-
dc.creatorAzevedo W. M. de-
dc.creatorVasconcelos E. A. de-
dc.creatorSilva Jr. E. F. da-
dc.date2002-
dc.date.accessioned2013-06-01T09:10:47Z-
dc.date.available2013-06-01T09:10:47Z-
dc.date.issued2013-06-01-
dc.identifierhttp://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200050-
dc.identifierhttp://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=421-
dc.identifier.urihttp://koha.mediu.edu.my:8181/jspui/handle/123456789/7724-
dc.descriptionWe report the development and characterization of high quality polyaniline-silicon heterojunction diodes appropriated for use as gas and/or ionizing radiation sensors. Polyaniline thin films 40 nm thick are an active part of the junction structure, that presents excellent electrical characteristics, with rectifying ratio of 50,000 at ± 1.0 Volt bias. The devices are very sensitive to gamma-radiation up to 6,000 Gy and to gas moistures such ammonia, nitric acid and trichloroethylene. The sensitivity of the diodes is observed through shifts of the current-voltage (I-V) curves which can be easily monitored to provide a calibration curve of the sensor either as a radiation dosimeter or as a gas sensor for use in applications in environments demanding gas monitoring or radiation dosimetry.-
dc.publisherSociedade Brasileira de Física-
dc.sourceBrazilian Journal of Physics-
dc.titleA silicon-polymer heterostructure for sensor applications-
Appears in Collections:Physics and Astronomy

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