Hole spin polarization in AlAs/Ga1-x-yMnxAlyAs structures

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/7733

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DC Field	Value	Language
dc.creator	Ghazali A.	-
dc.creator	Lima I. C. da Cunha	-
dc.creator	Boselli M. A.	-
dc.date	2002	-
dc.date.accessioned	2013-06-01T09:12:17Z	-
dc.date.available	2013-06-01T09:12:17Z	-
dc.date.issued	2013-06-01	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200053	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=430	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/7733	-
dc.description	A self-consistent calculation of the electronic properties of GaAlAs:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin polarization density is obtained for several structure configurations.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Hole spin polarization in AlAs/Ga1-x-yMnxAlyAs structures	-
Appears in Collections:	Physics and Astronomy

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