Electron mobility in nitride materials

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/7742

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DC Field	Value	Language
dc.creator	Rodrigues Clóves G.	-
dc.creator	Freire Valder N.	-
dc.creator	Vasconcellos Áurea R.	-
dc.creator	Luzzi Roberto	-
dc.date	2002	-
dc.date.accessioned	2013-06-01T09:13:47Z	-
dc.date.available	2013-06-01T09:13:47Z	-
dc.date.issued	2013-06-01	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200056	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=439	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/7742	-
dc.description	We contribute here a theoretical study of the electron mobility in n-doped GaN, InN, and AlN at moderate to high electric fields. We solve the set of coupled nonlinear integro-differential equations of evolution to obtain the steady-state values of the basic intensive nonequilibrium thermodynamic variables for the three materials. The regions with ohmic and non-ohmic behavior in the electron drift velocity dependence on the electric field strength are characterized in the three nitrides. The electron mobility is calculated, and it is shown that the larger corresponds to InN, and the smaller to AlN.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Electron mobility in nitride materials	-
Appears in Collections:	Physics and Astronomy

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