AC hot carrier transport in 3C- and 6H-SiC in the terahertz frequency and high lattice temperature regime

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/7745

Full metadata record

DC Field	Value	Language
dc.creator	Bezerra E. F.	-
dc.creator	Caetano E. W. S.	-
dc.creator	Freire V. N.	-
dc.creator	Costa J. A. P. da	-
dc.creator	Silva Jr. E. F. da	-
dc.date	2002	-
dc.date.accessioned	2013-06-01T09:14:17Z	-
dc.date.available	2013-06-01T09:14:17Z	-
dc.date.issued	2013-06-01	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200057	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=442	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/7745	-
dc.description	The complex mobility of electrons in 3C - and 6H-SiC subjected to intense high frequency electric fields is calculated taking into account effects of band nonparabolicity. The electric field, given by a dc component plus an ac component in the frequency range 0.1-100 THz, is applied along the [0001] ([111]) direction in the hexagonal (cubic) polytype. The real electron mobility presents a characteristic maximum peaking around 6-8 THz, while the imaginary electron mobility is structured, with characteristic minimum and maximum around 2-3 THz and 20{30 THz, respectively. These mobilities are seen to smooth down for higher temperatures in both polytypes.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	AC hot carrier transport in 3C- and 6H-SiC in the terahertz frequency and high lattice temperature regime	-
Appears in Collections:	Physics and Astronomy

Files in This Item:

There are no files associated with this item.

DSpace JSPUI