Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/7898
Title: Capacitance-voltage characteristics of InAs dots: a simple model
Issue Date: 1-Jun-2013
Publisher: Sociedade Brasileira de Física
Description: An electrostatic model was presented for the calculation of the capacitance-voltage characteristics of a semiconductor structure where quantum dots were embedded. The model was based on the linear coupling between the contributions of the quantum dots and the bulk host. We further applied this model to an InAs/GaAs self-assembled quantum dots system. The calculated capacitance was found in good agreement with the experimental curves, providing parameters of the dots ensemble, as the excitation energy of the confined electrons.
URI: http://koha.mediu.edu.my:8181/jspui/handle/123456789/7898
Other Identifiers: http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000400020
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=3&spage=784
Appears in Collections:Physics and Astronomy

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