Please use this identifier to cite or link to this item:
|Title:||Capacitance-voltage characteristics of InAs dots: a simple model|
|Publisher:||Sociedade Brasileira de Física|
|Description:||An electrostatic model was presented for the calculation of the capacitance-voltage characteristics of a semiconductor structure where quantum dots were embedded. The model was based on the linear coupling between the contributions of the quantum dots and the bulk host. We further applied this model to an InAs/GaAs self-assembled quantum dots system. The calculated capacitance was found in good agreement with the experimental curves, providing parameters of the dots ensemble, as the excitation energy of the confined electrons.|
|Appears in Collections:||Physics and Astronomy|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.