Capacitance-voltage characteristics of InAs dots: a simple model

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/7898

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DC Field	Value	Language
dc.creator	Chiquito A. J.	-
dc.creator	Pusep Yu. A.	-
dc.creator	Mergulhão S.	-
dc.creator	Galzerani J. C.	-
dc.date	2002	-
dc.date.accessioned	2013-06-01T09:39:53Z	-
dc.date.available	2013-06-01T09:39:53Z	-
dc.date.issued	2013-06-01	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000400020	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=3&spage=784	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/7898	-
dc.description	An electrostatic model was presented for the calculation of the capacitance-voltage characteristics of a semiconductor structure where quantum dots were embedded. The model was based on the linear coupling between the contributions of the quantum dots and the bulk host. We further applied this model to an InAs/GaAs self-assembled quantum dots system. The calculated capacitance was found in good agreement with the experimental curves, providing parameters of the dots ensemble, as the excitation energy of the confined electrons.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Capacitance-voltage characteristics of InAs dots: a simple model	-
Appears in Collections:	Physics and Astronomy

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