Electron field emission measurements from boron-doped CVD diamond on tantalum

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/8000

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DC Field	Value	Language
dc.creator	Gonçalves J. A. N.	-
dc.creator	Sandonato G. M.	-
dc.creator	Iha K.	-
dc.date	2003	-
dc.date.accessioned	2013-06-01T09:56:57Z	-
dc.date.available	2013-06-01T09:56:57Z	-
dc.date.issued	2013-06-01	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332003000100006	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2003&volume=33&issue=1&spage=94	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/8000	-
dc.description	Boron-doped polycrystaline diamond films grown by hot-filament-assisted chemical vapor deposition were studied with ultraviolet photoemission spectroscopy (UPS), Raman spectroscopy, X-ray diffractometry and current voltage measurements. The UPS measurement shows that the work function (phi) without electric field is about 3.9 eV . The field-emission current-voltage measurements indicate a threshold voltage ranging from 8.97x106 to 9.64x106 V=m and a work function (phi) about 0.3 eV . These results show that boron doped diamond films exhibit a negative electron affinity in high electric field.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Electron field emission measurements from boron-doped CVD diamond on tantalum	-
Appears in Collections:	Physics and Astronomy

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