Description and characterization of a ECR plasma device developed for thin film deposition

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/8015

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DC Field	Value	Language
dc.creator	Matta J.A.S. da	-
dc.creator	Galvão R.M.O.	-
dc.creator	Ruchko L.	-
dc.creator	Fantini M.C.A.	-
dc.creator	Kiyohara P.K.	-
dc.date	2003	-
dc.date.accessioned	2013-06-01T09:59:28Z	-
dc.date.available	2013-06-01T09:59:28Z	-
dc.date.issued	2013-06-01	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332003000100011	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2003&volume=33&issue=1&spage=123	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/8015	-
dc.description	The design, construction, and characterization of an electron-cyclotron-resonance (ECR) plasma device and its utilization for growing AlN polycrystals are described in detail. The plasma density and electron temperature were measured by two types of Langmuir probes under different conditions of magnetic configuration and RF substrate polarization. For the investigated nitrogen plasmas, the electron temperature increases towards substrate holder and decreases with pressure. The magnetic configuration and plasma parameters required for successful growth of polycrystal aluminum nitride have been determined.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Description and characterization of a ECR plasma device developed for thin film deposition	-
Appears in Collections:	Physics and Astronomy

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