Linear polarization of photons produced by the electron plane channeling in a silicon crystal

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/8021

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DC Field	Value	Language
dc.creator	Denyak V.V.	-
dc.creator	Evseev I.G.	-
dc.creator	Khvastunov V.M.	-
dc.creator	Likhachev V.P.	-
dc.creator	Paschuk S.A.	-
dc.creator	Schelin H.R.	-
dc.date	2003	-
dc.date.accessioned	2013-06-01T10:00:28Z	-
dc.date.available	2013-06-01T10:00:28Z	-
dc.date.issued	2013-06-01	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332003000100013	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2003&volume=33&issue=1&spage=133	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/8021	-
dc.description	We present the results of the polarization and intensity measurements versus photon energy Egamma = 5 - 35 MeV for the photon beam produced by the electron plane channeling with the energies 1.2 and 1.5 GeV in silicon crystals 500 mum and 290 mum thick along the (110) plane. The comparison with results of another research group and theoretical calculations indicate a qualitative agreement. The correlation between the shape of the radiation intensity spectrum and its polarization energy dependence is observed.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Linear polarization of photons produced by the electron plane channeling in a silicon crystal	-
Appears in Collections:	Physics and Astronomy

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