Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/123456789/8069
Title: Radiation-induced errors in memory chips
Issue Date: 1-Jun-2013
Publisher: Sociedade Brasileira de Física
Description: We have measured probabilities for proton, neutron and pion beams from accelerators to induce temporary or soft errors in a wide range of modern 16 Mb and 64 Mb DRAM memory chips, typical of those used in aircraft electronics. Relations among the cross sections for these particles are deduced. Measurement of alpha particle yields from pions on aluminum, as a surrogate for silicon, indicate that these reaction products are the proximate cause of the charge deposition resulting in errors.
URI: http://koha.mediu.edu.my:8181/jspui/handle/123456789/8069
Other Identifiers: http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332003000200013
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2003&volume=33&issue=2&spage=246
Appears in Collections:Physics and Astronomy

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