Radiation-induced errors in memory chips

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DC Field	Value	Language
dc.creator	Peterson R. J.	-
dc.date	2003	-
dc.date.accessioned	2013-06-01T10:08:28Z	-
dc.date.available	2013-06-01T10:08:28Z	-
dc.date.issued	2013-06-01	-
dc.identifier	http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332003000200013	-
dc.identifier	http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2003&volume=33&issue=2&spage=246	-
dc.identifier.uri	http://koha.mediu.edu.my:8181/jspui/handle/123456789/8069	-
dc.description	We have measured probabilities for proton, neutron and pion beams from accelerators to induce temporary or soft errors in a wide range of modern 16 Mb and 64 Mb DRAM memory chips, typical of those used in aircraft electronics. Relations among the cross sections for these particles are deduced. Measurement of alpha particle yields from pions on aluminum, as a surrogate for silicon, indicate that these reaction products are the proximate cause of the charge deposition resulting in errors.	-
dc.publisher	Sociedade Brasileira de Física	-
dc.source	Brazilian Journal of Physics	-
dc.title	Radiation-induced errors in memory chips	-
Appears in Collections:	Physics and Astronomy

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