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| DC Field | Value | Language |
|---|---|---|
| dc.creator | Song, T.L. | - |
| dc.creator | Chua, Soo-Jin | - |
| dc.creator | Fitzgerald, Eugene A. | - |
| dc.date | 2003-12-20T19:39:44Z | - |
| dc.date | 2003-12-20T19:39:44Z | - |
| dc.date | 2002-01 | - |
| dc.date.accessioned | 2013-10-09T02:33:21Z | - |
| dc.date.available | 2013-10-09T02:33:21Z | - |
| dc.date.issued | 2013-10-09 | - |
| dc.identifier | http://hdl.handle.net/1721.1/3975 | - |
| dc.identifier.uri | http://koha.mediu.edu.my:8181/xmlui/handle/1721 | - |
| dc.description | Graded InGaN buffers are employed to relax the strain arising from the lattice and thermal mismatches between GaN/InGaN epilayers grown on sapphire. The formation of V-pits in linearly graded InGaN/GaN bulk epilayers is illustrated. The V-pits were sampled using Atomic Force Microscopy and Scanning Electron Microscopy to examine their variation from the theoretical geometry shape. We discovered that the size of the V-pit opening in linearly graded InGaN, with and without GaN cap layer, has a Gaussian distribution. As such, we deduce that the V-pits are produced at different rates, as the growth of the InGaN layer progresses. In Stage I, the V-pits form at a slow rate at the beginning and then accelerate in Stage II when a critical thickness is reached before decelerating in Stage III after arriving at a mean size. It is possible to fill the V-pits by growing a GaN cap layer. It turns out that the filling of the V-pits is more effective at lower growth temperature of the GaN cap layer and the size of the V-pits opening, which is continued in to GaN cap layer, is not dependent on the GaN cap layer thickness. Furthermore, graded InGaN/GaN layers display better strain relaxation as compared to conventionally grown bulk GaN. By employing a specially design configuration, the V-pits can be eliminated from the InGaN epilayer. | - |
| dc.description | Singapore-MIT Alliance (SMA) | - |
| dc.format | 236285 bytes | - |
| dc.format | application/pdf | - |
| dc.language | en_US | - |
| dc.relation | Advanced Materials for Micro- and Nano-Systems (AMMNS); | - |
| dc.subject | graded InGaN buffers | - |
| dc.subject | strain relaxation | - |
| dc.subject | GaN/InGaN epliayers | - |
| dc.subject | sapphire | - |
| dc.subject | V-pits | - |
| dc.title | Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epliayers Grown on Sapphire | - |
| dc.type | Article | - |
| Appears in Collections: | MIT Items | |
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