Please use this identifier to cite or link to this item:
http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/7368Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.creator | Vajpeyi, Agam P. | - |
| dc.creator | Chua, Soo-Jin | - |
| dc.creator | Tripathy, S. | - |
| dc.creator | Fitzgerald, Eugene A. | - |
| dc.date | 2004-12-10T14:02:52Z | - |
| dc.date | 2004-12-10T14:02:52Z | - |
| dc.date | 2005-01 | - |
| dc.date.accessioned | 2013-10-09T02:49:25Z | - |
| dc.date.available | 2013-10-09T02:49:25Z | - |
| dc.date.issued | 2013-10-09 | - |
| dc.identifier | http://hdl.handle.net/1721.1/7368 | - |
| dc.identifier.uri | http://koha.mediu.edu.my:8181/xmlui/handle/1721 | - |
| dc.description | Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman scattering, scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques have been employed. SEM and AFM measurements revealed an average pore size of about 85-90 nm with a transverse dimension of 70-75 nm. As compared to the as-grown GaN film, the porous layer exhibits a substantial photoluminescence intensity enhancement with a partial relaxation of compressive stress. Such a stress relaxation is further confirmed by the red shifted E₂(TO) phonon peak in the Raman spectrum of porous GaN. | - |
| dc.description | Singapore-MIT Alliance (SMA) | - |
| dc.format | 2415487 bytes | - |
| dc.format | application/pdf | - |
| dc.language | en | - |
| dc.relation | Advanced Materials for Micro- and Nano-Systems (AMMNS); | - |
| dc.subject | gallium nitride | - |
| dc.subject | porous semiconductors | - |
| dc.subject | ultraviolet assisted electrochemical etching | - |
| dc.subject | nanoporous GaN film | - |
| dc.title | High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching | - |
| dc.type | Article | - |
| Appears in Collections: | MIT Items | |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.