High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching

Please use this identifier to cite or link to this item: http://dspace.mediu.edu.my:8181/xmlui/handle/1721.1/7368

Title:	High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching
Keywords:	gallium nitride porous semiconductors ultraviolet assisted electrochemical etching nanoporous GaN film
Issue Date:	9-Oct-2013
Description:	Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman scattering, scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques have been employed. SEM and AFM measurements revealed an average pore size of about 85-90 nm with a transverse dimension of 70-75 nm. As compared to the as-grown GaN film, the porous layer exhibits a substantial photoluminescence intensity enhancement with a partial relaxation of compressive stress. Such a stress relaxation is further confirmed by the red shifted E₂(TO) phonon peak in the Raman spectrum of porous GaN. Singapore-MIT Alliance (SMA)
URI:	http://koha.mediu.edu.my:8181/xmlui/handle/1721
Other Identifiers:	http://hdl.handle.net/1721.1/7368
Appears in Collections:	MIT Items

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