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http://dspace.mediu.edu.my:8181/xmlui/handle/1957/515Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor | Wager, John F. | - |
| dc.contributor | Subramanian, Sivaramakrishnan | - |
| dc.contributor | Dhagat, Pallavi | - |
| dc.contributor | Warnes, William H. | - |
| dc.date | 2005-10-18T17:30:30Z | - |
| dc.date | 2005-10-18T17:30:30Z | - |
| dc.date | 2005-09-01 | - |
| dc.date | 2005-10-18T17:30:30Z | - |
| dc.date.accessioned | 2013-10-16T07:27:39Z | - |
| dc.date.available | 2013-10-16T07:27:39Z | - |
| dc.date.issued | 2013-10-16 | - |
| dc.identifier | http://hdl.handle.net/1957/515 | - |
| dc.identifier.uri | http://koha.mediu.edu.my:8181/xmlui/handle/1957/515 | - |
| dc.description | Graduation date: 2006 | - |
| dc.description | A discrete trap model is developed and employed for elucidation of thin-film transistor (TFT) device physics trends. An attractive feature of this model is that only two model parameters are required, the trap energy depth, E[subscript T], and the trap density, N[subscript T]. The most relevant trends occur when E[subscript T] is above the Fermi level. For this case drain current – drain voltage simulations indicate that the drain current decreases with an increase in N[subscript T] and E[subscript T]. The threshold voltage, V[subscript T], extracted from drain current – gate voltage (I[subscript D] – V[[subscript GS]) simulations, is found to be composed of two parts, V[subscript TRAP], the voltage required to fill all the traps and V[subscript ELECTRON], the voltage associated with electrons populating the conduction band. V[subscript T] moves toward a more positive voltage as N[subscript T] and E[subscript T] increase. The inverse subthreshold voltage swing, S, extracted from a log(I[subscript D]) – V[subscript GS] curve, increases as N[subscript T] and E[subscript T] increase. Finally, incremental mobility and average mobility versus gate voltage simulations indicate that the channel mobility decreases with increasing N[subscript T] and E[subscript T]. | - |
| dc.language | en_US | - |
| dc.subject | Thin-film transistor | - |
| dc.subject | Trap modeling | - |
| dc.title | Discrete trap modeling of thin-film transistors | - |
| dc.type | Thesis | - |
| Appears in Collections: | ScholarsArchive@OSU | |
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