| dc.creator |
Bhagwat S.S. |
|
| dc.creator |
Bhangale A.R. |
|
| dc.creator |
Patil J.M. |
|
| dc.creator |
Shirodkar V.S. |
|
| dc.creator |
Pinto R. |
|
| dc.creator |
Apte P.R. |
|
| dc.creator |
Pai S.P. |
|
| dc.date |
1999 |
|
| dc.date.accessioned |
2013-05-29T23:04:20Z |
|
| dc.date.available |
2013-05-29T23:04:20Z |
|
| dc.date.issued |
2013-05-30 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000200020 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=1999&volume=29&issue=2&spage=388 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/2612 |
|
| dc.description |
Calcium Fluoride buffer lavers were grown on Si < 100 > substrates using the low energy cluster beam deposition technique. The films were annealed at various temperatures ranging between 500oC and 700oC. The SEM studies showed that as-deposited films were well oriented along the c-axis and had very smooth surface morphology. The annealed films on the contarary, showed lowering of peak intensities and roughening of the surface. The dielectric constant derived from the C-V measurements at 1 MHz were 2.01 and 18 for as-deposited and annealed films respectively. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
Growth of CaF2 buffer on Si using low energy cluster beam deposition technique and study of its properties |
|