| dc.creator |
Hanamoto L. K. |
|
| dc.creator |
Henriques A. B. |
|
| dc.creator |
Tribuzy C. V.-B. |
|
| dc.creator |
Souza P. L. |
|
| dc.creator |
Yavich B. |
|
| dc.creator |
Abramof E. |
|
| dc.date |
2002 |
|
| dc.date.accessioned |
2013-05-30T01:49:48Z |
|
| dc.date.available |
2013-05-30T01:49:48Z |
|
| dc.date.issued |
2013-05-30 |
|
| dc.identifier |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200023 |
|
| dc.identifier |
http://www.doaj.org/doaj?func=openurl&genre=article&issn=01039733&date=2002&volume=32&issue=2a&spage=334 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/jspui/handle/123456789/3420 |
|
| dc.description |
The interfaces in InP=In0.53 Ga0.47As superlattices modulation doped with Si were investigated using magneto-transport, capacitance-voltage, and high resolution X-ray diffraction measurements. Results indicate that a thick interfacial layer is formed when InP is grown on top of In xGa1-xAs, and that Si atoms that fall in the interfacial layer have a high probability of not forming a shallow donor center. Using a simple theoretical model the width of the interfacial layer which was estimated to be 7±1 monolayers. |
|
| dc.publisher |
Sociedade Brasileira de Física |
|
| dc.source |
Brazilian Journal of Physics |
|
| dc.title |
Interfacial layers and impurity segregation in InP/In0.53Ga0.47As superlattices |
|