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Novel CMOS-Compatible Optical Platform

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dc.creator Pitera, Arthur J.
dc.creator Groenert, M. E.
dc.creator Yang, V. K.
dc.creator Lee, Minjoo L.
dc.creator Leitz, Christopher W.
dc.creator Taraschi, G.
dc.creator Cheng, Zhiyuan
dc.creator Fitzgerald, Eugene A.
dc.date 2003-11-20T22:05:13Z
dc.date 2003-11-20T22:05:13Z
dc.date 2003-01
dc.date.accessioned 2013-10-09T02:31:52Z
dc.date.available 2013-10-09T02:31:52Z
dc.date.issued 2013-10-09
dc.identifier http://hdl.handle.net/1721.1/3714
dc.identifier.uri http://koha.mediu.edu.my:8181/xmlui/handle/1721
dc.description A research synopsis is presented summarizing work with integration of Ge and III-V semiconductors and optical devices with Si. III-V GaAs/AlGaAs quantum well lasers and GaAs/AlGaAs optical circuit structures have been fabricated on Si using Ge/GeSi/Si virtual substrates. The lasers fabricated on bulk GaAs showed similar output characteristics as those on Si. The GaAs/AlGaAs lasers fabricated on Si emitted at 858nm and had room temperature cw lifetimes of ~4hours. Straight optical links integrating an LED emitter, waveguide and detector exhibited losses of approximately 144dB/cm. A process for fabrication of a novel CMOS-compatible platform that integrates III-V or Ge layers with Si is demonstrated. Thin Ge layers have been transferred from Ge/GeSi/Si virtual substrates to bulk Si utilizing wafer bonding and an epitaxial Si CMP layer to facilitate virtual substrate planarization. A unique CMP-less method for removal of Ge exfoliation damage induced by the SmartCutâ ¢ process is also presented.
dc.description Singapore-MIT Alliance (SMA)
dc.format 886237 bytes
dc.format application/pdf
dc.language en_US
dc.relation Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject chemo-mechanical planarization
dc.subject GaAs/AlGaAs lasers
dc.subject GeSi virtual substrates
dc.subject optical circuit
dc.subject wafer bonding
dc.title Novel CMOS-Compatible Optical Platform
dc.type Article


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