The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, uniform film of NiGe was formed at 400°C for Ni reaction with Ge. Whereas using in situ annealing at 400°C, Ni₃Ge₂ and NiGe were observed. For the interfacial reaction of Ni with relaxed Si₀.₇₅Ge₀.₂₅ films rapid thermal annealed at 400°C, a mixed layer consisting of Ni₃(Si₁â xGex)₂, Ni(Si₁â yGey), and Si₁â zGez (z>y>x) was formed; whereas only Ni₃(Si₁â xGex)₂ and Ni(Si₁â yGey>) were observed by in situ annealing.Singapore-MIT Alliance (SMA)