| dc.creator |
Jin, Lijuan |
|
| dc.creator |
Pey, Kin Leong |
|
| dc.creator |
Choi, Wee Kiong |
|
| dc.creator |
Fitzgerald, Eugene A. |
|
| dc.creator |
Antoniadis, Dimitri A. |
|
| dc.creator |
Pitera, Arthur J. |
|
| dc.creator |
Lee, Minjoo L. |
|
| dc.creator |
Chi, D.Z. |
|
| dc.date |
2003-11-24T20:54:41Z |
|
| dc.date |
2003-11-24T20:54:41Z |
|
| dc.date |
2003-01 |
|
| dc.date.accessioned |
2013-10-09T02:32:11Z |
|
| dc.date.available |
2013-10-09T02:32:11Z |
|
| dc.date.issued |
2013-10-09 |
|
| dc.identifier |
http://hdl.handle.net/1721.1/3724 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/xmlui/handle/1721 |
|
| dc.description |
The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, uniform film of NiGe was formed at 400°C for Ni reaction with Ge. Whereas using in situ annealing at 400°C, Ni₃Ge₂ and NiGe were observed. For the interfacial reaction of Ni with relaxed Si₀.₇₅Ge₀.₂₅ films rapid thermal annealed at 400°C, a mixed layer consisting of Ni₃(Si₁â xGex)₂, Ni(Si₁â yGey), and Si₁â zGez (z>y>x) was formed; whereas only Ni₃(Si₁â xGex)₂ and Ni(Si₁â yGey>) were observed by in situ annealing. |
|
| dc.description |
Singapore-MIT Alliance (SMA) |
|
| dc.format |
1386604 bytes |
|
| dc.format |
application/pdf |
|
| dc.language |
en_US |
|
| dc.relation |
Advanced Materials for Micro- and Nano-Systems (AMMNS); |
|
| dc.subject |
Ni-germanosilicide |
|
| dc.subject |
in situ annealing |
|
| dc.title |
The interfacial reaction of Ni on (100) Si₁â xGex (x=0, 0.25) and (111) Ge |
|
| dc.type |
Article |
|