MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels

dc.creator	Fitzgerald, Eugene A.
dc.creator	Lee, Minjoo L.
dc.creator	Leitz, Christopher W.
dc.creator	Antoniadis, Dimitri A.
dc.date	2003-11-24T21:01:53Z
dc.date	2003-11-24T21:01:53Z
dc.date	2003-01
dc.date.accessioned	2013-10-09T02:32:12Z
dc.date.available	2013-10-09T02:32:12Z
dc.date.issued	2013-10-09
dc.identifier	http://hdl.handle.net/1721.1/3726
dc.identifier.uri	http://koha.mediu.edu.my:8181/xmlui/handle/1721
dc.description	Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with high hole mobilities can also be grown on relaxed SiGe. We review progress in strained Si and dual channel heterostructures, and also introduce high hole mobility digital alloy heterostructures. By optimizing growth conditions and understanding the physics of hole and electron transport in these devices, we have fabricated nearly symmetric mobility p- and n-MOSFETs on a common Si₀.₅Ge₀.₅ virtual substrate.
dc.description	Singapore-MIT Alliance (SMA)
dc.format	460990 bytes
dc.format	application/pdf
dc.language	en_US
dc.relation	Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject	SiGe
dc.subject	strained silicon
dc.subject	germanium
dc.subject	MOSFETs
dc.subject	hole mobility
dc.title	MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels
dc.type	Article

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