| dc.creator |
Jin, Lijuan |
|
| dc.creator |
Pey, Kin Leong |
|
| dc.creator |
Choi, Wee Kiong |
|
| dc.creator |
Fitzgerald, Eugene A. |
|
| dc.creator |
Antoniadis, Dimitri A. |
|
| dc.creator |
Chi, D.Z. |
|
| dc.date |
2003-12-13T16:23:54Z |
|
| dc.date |
2003-12-13T16:23:54Z |
|
| dc.date |
2004-01 |
|
| dc.date.accessioned |
2013-10-09T02:32:39Z |
|
| dc.date.available |
2013-10-09T02:32:39Z |
|
| dc.date.issued |
2013-10-09 |
|
| dc.identifier |
http://hdl.handle.net/1721.1/3825 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/xmlui/handle/1721 |
|
| dc.description |
The effect of Ni and Ni(Pt) alloy with ~5 and 10 at. % Pt on the agglomeration and Ge out-diffusion in Nickel germanosilicide formed on Si₀.₇₅Ge₀.₂₅(100) has been studied. A remarkable improvement in the agglomeration behavior with increasing Pt atomic percentage is observed by sheet resistance measurements and scanning electron microscopy (SEM). In addition, x-ray diffraction (XRD) shows that only NiSiGe or Ni(Pt)SiGe phase exists from 400 to 800°C. However, Ge out-diffusion from the monogermanosilicide grains is obvious at 600°C and 700°C for Ni/SiGe and Ni(Pt)(Pt at.%~10%)/SiGe, respectively, evident by XRD and micro-Raman spectroscopy. The improved melting temperature of Ni(Pt)SiGe solution compared to that of NiSiGe is the likely reason of seeing better surface morphology and suppressing Ge out-diffusion of the germanosilicide grains observed. |
|
| dc.description |
Singapore-MIT Alliance (SMA) |
|
| dc.format |
1019837 bytes |
|
| dc.format |
application/pdf |
|
| dc.language |
en_US |
|
| dc.relation |
Advanced Materials for Micro- and Nano-Systems (AMMNS); |
|
| dc.subject |
agglomeration |
|
| dc.subject |
Ge out-diffusion |
|
| dc.title |
Effect of Pt on agglomeration and Ge out-diffusion in Ni(Pt) germanosilicide |
|
| dc.type |
Article |
|