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GaN Nanopore Arrays: Fabrication and Characterization

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dc.creator Wang, Yadong
dc.creator Peng, Chen
dc.creator Sander, Melissa
dc.creator Chua, Soo-Jin
dc.creator Fonstad, Clifton G. Jr.
dc.date 2003-12-13T16:39:04Z
dc.date 2003-12-13T16:39:04Z
dc.date 2004-01
dc.date.accessioned 2013-10-09T02:32:39Z
dc.date.available 2013-10-09T02:32:39Z
dc.date.issued 2013-10-09
dc.identifier http://hdl.handle.net/1721.1/3827
dc.identifier.uri http://koha.mediu.edu.my:8181/xmlui/handle/1721
dc.description GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN surface by evaporating an Al film onto a GaN epilayer and subsequently anodizing the aluminum. To minimize plasma-induced damage, the template was exposed to CF4-based plasma conditions. Scanning electron microscopy (SEM) analysis shows that the diameter and the periodicity of the nanopores in the GaN were directly transferred from the original anodic alumina template. The pore diameter in the AAO film can be easily controlled by tuning the anodization conditions. Atomic force microscopy (AFM), photoluminescence (PL) and micro-Raman techniques were employed to assess the quality of the etched GaN nanopore surface. Such a cost-effective method to produce nano-patterned GaN template would be useful for growth and fabrication of III-Nitrides based nanostructures and photonic band gap materials.
dc.description Singapore-MIT Alliance (SMA)
dc.format 467419 bytes
dc.format application/pdf
dc.language en_US
dc.relation Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject GaN nanopore arrays
dc.subject inductively coupled plasma etching
dc.subject anodic aluminum oxide
dc.subject pore diameter
dc.subject nanostructures
dc.subject photonic band gap materials
dc.title GaN Nanopore Arrays: Fabrication and Characterization
dc.type Article


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