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Gold Thermocompression Wafer Bonding

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dc.creator Spearing, S. Mark
dc.creator Tsau, Christine H.
dc.creator Schmidt, Martin A.
dc.date 2003-12-13T16:41:31Z
dc.date 2003-12-13T16:41:31Z
dc.date 2004-01
dc.date.accessioned 2013-10-09T02:32:39Z
dc.date.available 2013-10-09T02:32:39Z
dc.date.issued 2013-10-09
dc.identifier http://hdl.handle.net/1721.1/3828
dc.identifier.uri http://koha.mediu.edu.my:8181/xmlui/handle/1721
dc.description Thermocompression bonding of gold is a promising technique for the fabrication and packaging microelectronic and MEMS devices. The use of a gold interlayer and moderate temperatures and pressures results in a hermetic, electrically conductive bond. This paper documents work conducted to model the effect of patterning in causing pressure non-uniformities across the wafer and its effect on the subsequent fracture response. A finite element model was created that revealed pattern-dependent local pressure variations of more than a factor of three. This variation is consistent with experimental observations of bond quality across individual wafers A cohesive zone model was used to investigate the resulting effect of non-uniform bond quality on the fracture behavior. A good, qualitative agreement was obtained with experimental observations of the load-displacement response of bonds in fracture tests.
dc.description Singapore-MIT Alliance (SMA)
dc.format 918454 bytes
dc.format application/pdf
dc.language en_US
dc.relation Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject wafer bonding
dc.subject thermocompression
dc.subject cohesive zone
dc.title Gold Thermocompression Wafer Bonding
dc.type Article


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