High hole and electron mobilities using Strained Si/Strained Ge heterostructures

dc.creator	Gupta, Saurabh
dc.creator	Lee, Minjoo L.
dc.creator	Leitz, Christopher W.
dc.creator	Fitzgerald, Eugene A.
dc.date	2003-12-13T16:54:41Z
dc.date	2003-12-13T16:54:41Z
dc.date	2004-01
dc.date.accessioned	2013-10-09T02:32:39Z
dc.date.available	2013-10-09T02:32:39Z
dc.date.issued	2013-10-09
dc.identifier	http://hdl.handle.net/1721.1/3830
dc.identifier.uri	http://koha.mediu.edu.my:8181/xmlui/handle/1721
dc.description	PMOS and NMOS mobility characteristics of the dual channel (strained Si/strained Ge) heterostructure have been reviewed. It is shown that the dual channel heterostructure can provide substantially enhanced mobilities for both electrons and holes. However, germanium interdiffusion from the germanium rich buried layer into the underlying buffer layer could potentially reduce the hole mobility enhancements.
dc.description	Singapore-MIT Alliance (SMA)
dc.format	308344 bytes
dc.format	application/pdf
dc.language	en_US
dc.relation	Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject	strained-Ge
dc.subject	SiGe
dc.subject	germanium
dc.subject	MOSFET
dc.subject	mobility
dc.subject	strained-Si
dc.subject	pMOSFET
dc.subject	nMOSFET
dc.subject	germanium-diffusion
dc.title	High hole and electron mobilities using Strained Si/Strained Ge heterostructures
dc.type	Article

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