| dc.creator |
Wang, S.Z. |
|
| dc.creator |
Yoon, Soon Fatt |
|
| dc.date |
2003-12-14T23:48:01Z |
|
| dc.date |
2003-12-14T23:48:01Z |
|
| dc.date |
2004-01 |
|
| dc.date.accessioned |
2013-10-09T02:33:09Z |
|
| dc.date.available |
2013-10-09T02:33:09Z |
|
| dc.date.issued |
2013-10-09 |
|
| dc.identifier |
http://hdl.handle.net/1721.1/3906 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/xmlui/handle/1721 |
|
| dc.description |
GaAs-based InGaAsN/GaAs quantum well is found to be very sensitive to growth conditions and ex-situ annealing processes. Annealing could drastically increase the optical quality of GaAs-based InGaAsN/GaAs quantum well. As an end of this paper, some results on InGaAsN/GaAsN/AlGaAs laser diodes are also presented. |
|
| dc.description |
Singapore-MIT Alliance (SMA) |
|
| dc.format |
293743 bytes |
|
| dc.format |
application/pdf |
|
| dc.language |
en_US |
|
| dc.relation |
Innovation in Manufacturing Systems and Technology (IMST); |
|
| dc.subject |
InGaAsN/GaAs |
|
| dc.subject |
quantum well |
|
| dc.subject |
molecular beam epitaxy |
|
| dc.subject |
laser diode |
|
| dc.title |
InGaAsN/GaAs Quantum-well Laser Diodes |
|
| dc.type |
Article |
|