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Magnetically-Assisted Statistical Assembly - a new heterogeneous integration technique

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dc.creator Fonstad, Clifton G. Jr.
dc.date 2003-12-20T19:43:44Z
dc.date 2003-12-20T19:43:44Z
dc.date 2002-01
dc.date.accessioned 2013-10-09T02:33:23Z
dc.date.available 2013-10-09T02:33:23Z
dc.date.issued 2013-10-09
dc.identifier http://hdl.handle.net/1721.1/3978
dc.identifier.uri http://koha.mediu.edu.my:8181/xmlui/handle/1721
dc.description This paper presents a new technique for the monolithic heterogeneous integration of compound semiconductor devices with silicon integrated circuits, and establishes the theoretical foundation for a key element of the process, tailored magnetic attraction and retention. It is shown how a patterned thin film of hard magnetic material can be used to engineer the attraction between the film and nanopills covered with a soft magnetic material. With a suitable choice of pattern, it is anticipated that it will be possible to achieve complete filling of recesses in the surface of fully-processed integrated circuit wafers, preparatory to subsequent processing to fabricate the nanopills into heterostructure devices integrated monolithically with the pre-existing electronics.
dc.description Singapore-MIT Alliance (SMA)
dc.format 96834 bytes
dc.format application/pdf
dc.language en_US
dc.relation Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject optoelectronics
dc.subject heterogeneous integration
dc.subject self assembly
dc.subject VCSELs
dc.subject III-V heterostructures
dc.title Magnetically-Assisted Statistical Assembly - a new heterogeneous integration technique
dc.type Article


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