| dc.creator |
Cheng, Zhiyuan |
|
| dc.creator |
Fitzgerald, Eugene A. |
|
| dc.creator |
Antoniadis, Dimitri A. |
|
| dc.date |
2003-12-22T20:48:14Z |
|
| dc.date |
2003-12-22T20:48:14Z |
|
| dc.date |
2002-01 |
|
| dc.date.accessioned |
2013-10-09T02:33:27Z |
|
| dc.date.available |
2013-10-09T02:33:27Z |
|
| dc.date.issued |
2013-10-09 |
|
| dc.identifier |
http://hdl.handle.net/1721.1/3986 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/xmlui/handle/1721 |
|
| dc.description |
In this work, we have developed two different fabrication processes for relaxed Si₁₋xGex-on-insulator (SGOI) substrates: (1) SGOI fabrication by etch-back approach, and (2) by "smart-cut" approach utilizing hydrogen implantation. Etch-back approach produces SGOI substrate with less defects in SiGe film, but the SiGe film uniformity is inferior. "Smart-cut" approach has better control on the SiGe film thickness and uniformity, and is applicable to wider Ge content range of the SiGe film. We have also fabricated strained-Si n-MOSFET’s on SGOI substrates, in which epitaxial regrowth was used to produce the surface strained Si layer on relaxed SGOI substrate, followed by large-area n-MOSFET’s fabrication on this structure. The measured electron mobility shows significant enhancement (1.7 times) over both the universal mobility and that of co-processed bulk-Si MOSFET’s. This SGOI process has a low thermal budget and thus is compatible with a wide range of Ge contents in Si₁₋xGex layer. |
|
| dc.description |
Singapore-MIT Alliance (SMA) |
|
| dc.format |
105803 bytes |
|
| dc.format |
application/pdf |
|
| dc.language |
en_US |
|
| dc.relation |
Advanced Materials for Micro- and Nano-Systems (AMMNS); |
|
| dc.subject |
strained-Si |
|
| dc.subject |
SiGe |
|
| dc.subject |
SiGe-on-Insulator |
|
| dc.subject |
SGOI |
|
| dc.subject |
SOI |
|
| dc.subject |
MOSFET |
|
| dc.subject |
mobility |
|
| dc.subject |
bonding |
|
| dc.subject |
etch-back |
|
| dc.subject |
etch-stop |
|
| dc.subject |
smart-cut |
|
| dc.subject |
hydrogen implantation |
|
| dc.title |
SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication |
|
| dc.type |
Article |
|