| dc.creator |
Teo, L.W. |
|
| dc.creator |
Heng, C.L. |
|
| dc.creator |
Ho, V. |
|
| dc.creator |
Tay, M.S. |
|
| dc.creator |
Choi, Wee Kiong |
|
| dc.creator |
Chim, Wai Kin |
|
| dc.creator |
Antoniadis, Dimitri A. |
|
| dc.creator |
Fitzgerald, Eugene A. |
|
| dc.date |
2003-12-22T21:01:21Z |
|
| dc.date |
2003-12-22T21:01:21Z |
|
| dc.date |
2002-01 |
|
| dc.date.accessioned |
2013-10-09T02:33:28Z |
|
| dc.date.available |
2013-10-09T02:33:28Z |
|
| dc.date.issued |
2013-10-09 |
|
| dc.identifier |
http://hdl.handle.net/1721.1/3991 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/xmlui/handle/1721 |
|
| dc.description |
A novel method of synthesizing and controlling the size of germanium nanocrystals was developed. A tri-layer structure comprising of a thin (~5nm) SiO₂ layer grown using rapid thermal oxidation (RTO), followed by a layer of Ge+SiO₂ of varying thickness (6 - 20 nm) deposited using the radio frequency (r.f.) co-sputtering technique and a SiO₂ cap layer (50nm) deposited using r.f. sputtering, was investigated. It was verified using TEM that germanium nanocrystals of sizes ranging from 6 – 20 nm were successfully fabricated after thermal annealing of the tri-layer structure under suitable conditions. The nanocrystals were found to be well confined by the RTO SiO₂ and the cap SiO₂ under specific annealing conditions. The electrical properties of the tri-layer structure have been characterized using MOS capacitor test devices. A significant hysteresis can be observed from the C-V measurements and this suggests the charge storage capability of the nanocrystals. The proposed technique has the potential for fabricating memory devices with controllable nanocrystals sizes. |
|
| dc.description |
Singapore-MIT Alliance (SMA) |
|
| dc.format |
211092 bytes |
|
| dc.format |
application/pdf |
|
| dc.language |
en_US |
|
| dc.relation |
Advanced Materials for Micro- and Nano-Systems (AMMNS); |
|
| dc.subject |
germanium nanocrystals |
|
| dc.subject |
rapid thermal oxidation |
|
| dc.subject |
radio frequency sputtering |
|
| dc.subject |
memory devices |
|
| dc.title |
Synthesis of Germanium Nanocrystals and its Possible Application in Memory Devices |
|
| dc.type |
Article |
|