| dc.creator |
Chew, Han Guan |
|
| dc.creator |
Choi, Wee Kiong |
|
| dc.creator |
Chim, Wai Kin |
|
| dc.creator |
Fitzgerald, Eugene A. |
|
| dc.date |
2004-12-10T14:08:26Z |
|
| dc.date |
2004-12-10T14:08:26Z |
|
| dc.date |
2005-01 |
|
| dc.date.accessioned |
2013-10-09T02:49:26Z |
|
| dc.date.available |
2013-10-09T02:49:26Z |
|
| dc.date.issued |
2013-10-09 |
|
| dc.identifier |
http://hdl.handle.net/1721.1/7370 |
|
| dc.identifier.uri |
http://koha.mediu.edu.my:8181/xmlui/handle/1721 |
|
| dc.description |
The effect of flux angle, substrate temperature and deposition rate on obliquely deposited germanium (Ge) films has been investigated. By carrying out deposition with the vapor flux inclined at 87° to the substrate normal at substrate temperatures of 250°C or 300°C, it may be possible to obtain isolated Ge nanowires. The Ge nanowires are crystalline as shown by Raman Spectroscopy. |
|
| dc.description |
Singapore-MIT Alliance (SMA) |
|
| dc.format |
1682300 bytes |
|
| dc.format |
application/pdf |
|
| dc.language |
en |
|
| dc.relation |
Advanced Materials for Micro- and Nano-Systems (AMMNS); |
|
| dc.subject |
Oblique angle deposition |
|
| dc.subject |
Germanium nanowires |
|
| dc.title |
Oblique Angle Deposition of Germanium Film on Silicon Substrate |
|
| dc.type |
Article |
|